Manufacturer Part Number
SPB80P06P
Manufacturer
Infineon Technologies
Introduction
The SPB80P06P is a high-performance P-channel MOSFET transistor from Infineon Technologies. It is part of the SIPMOS series and offers robust and reliable performance in a variety of applications.
Product Features and Performance
60V Drain-Source Voltage (Vdss)
±20V Gate-Source Voltage (Vgs)
23mΩ On-Resistance (Rds(on)) at 64A Drain Current, 10V Gate Voltage
80A Continuous Drain Current (Id) at 25°C (Tc)
5033pF Input Capacitance (Ciss) at 25V Drain-Source Voltage
340W Power Dissipation (Tc)
Wide Operating Temperature Range: -55°C to 175°C
Product Advantages
Excellent on-state resistance for low conduction losses
High current handling capability
Robust design for reliable operation
Suitable for high-power applications
Key Technical Parameters
Transistor Type: P-Channel MOSFET
Threshold Voltage (Vgs(th)): 4V at 5.5mA Drain Current
Gate Charge (Qg): 173nC at 10V Gate Voltage
Mounting Type: Surface Mount
Quality and Safety Features
RoHS non-compliant
Compatibility
Compatible with various high-power electronic applications
Application Areas
Power supplies
Motor drives
Industrial automation
Automotive electronics
Product Lifecycle
This product is an active and available component from Infineon Technologies.
Replacement or upgrade options may be available, depending on specific application requirements.
Key Reasons to Choose This Product
Excellent performance-to-cost ratio
Robust and reliable design for high-power applications
Wide operating temperature range for versatile use
Ease of integration with surface mount packaging
SPB80P06P MOSCypress Semiconductor (Infineon Technologies)
SPBG56SHITACHI