Manufacturer Part Number
SPB18P06P
Manufacturer
Infineon Technologies
Introduction
The SPB18P06P is a high-performance P-channel MOSFET transistor from Infineon Technologies, designed for a wide range of power management and switching applications.
Product Features and Performance
P-channel MOSFET with low on-resistance (RDS(on)) of 130 mΩ
High drain current rating of 18.7 A at 25°C
Wide operating temperature range of -55°C to 175°C
Low input capacitance of 860 pF
High power dissipation capability of 81.1 W
Product Advantages
Efficient power management and switching due to low RDS(on)
Reliable operation in high-temperature environments
Compact surface-mount package (TO-263-3)
Suitable for a variety of power electronics applications
Key Technical Parameters
Drain-to-Source Voltage (VDS): 60 V
Gate-to-Source Voltage (VGS): ±20 V
Continuous Drain Current (ID): 18.7 A at 25°C
On-Resistance (RDS(on)): 130 mΩ at 13.2 A, 10 V
Input Capacitance (Ciss): 860 pF at 25 V
Power Dissipation (PD): 81.1 W at 25°C
Quality and Safety Features
RoHS non-compliant
Industrial-grade quality and reliability
Compatibility
Suitable for a wide range of power electronics applications, including power supplies, motor drives, and industrial control systems.
Application Areas
Power management and switching in power supplies, motor drives, industrial control systems, and other power electronics applications.
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacement or upgrade options may be available from Infineon Technologies or other semiconductor manufacturers.
Key Reasons to Choose This Product
High performance and efficiency due to low RDS(on) and high current rating
Reliable operation in high-temperature environments
Compact and easy-to-use surface-mount package
Suitable for a broad range of power electronics applications
Availability and support from a leading semiconductor manufacturer, Infineon Technologies.
SPB2026ZRFMD