Manufacturer Part Number
SPB17N80C3ATMA1
Manufacturer
Infineon Technologies
Introduction
High-voltage N-channel MOSFET in a TO-263 package
Part of the CoolMOS series
Product Features and Performance
Operating temperature range: -55°C to 150°C
Drain-to-source voltage (Vdss): 800V
Maximum gate-to-source voltage (Vgs): ±20V
Maximum continuous drain current (Id): 17A at 25°C
On-state resistance (Rds(on)): 290mΩ at 11A, 10V
Input capacitance (Ciss): 2300pF at 100V
Maximum power dissipation: 227W at 25°C
Product Advantages
Low on-state resistance for high efficiency
High voltage rating for use in high-voltage applications
Compact TO-263 package for space-constrained designs
Key Technical Parameters
MOSFET technology: N-channel
Threshold voltage (Vgs(th)): 3.9V at 1mA
Gate charge (Qg): 177nC at 10V
Quality and Safety Features
RoHS3 compliant
Suitable for surface mount assembly
Compatibility
Compatible with various high-voltage, high-power applications
Application Areas
Switch-mode power supplies
Motor drives
Industrial and consumer electronics
Product Lifecycle
Currently available
No discontinuation or replacement plans announced
Key Reasons to Choose This Product
Excellent performance-to-size ratio
Reliable operation in high-temperature environments
Efficient power conversion with low on-state resistance
Compact and easy to integrate into designs
SPB2026ZPCK3RFMD