SN7002NE6327 - Infineon Technologies

Manufacturer Part Number

SN7002NE6327

Manufacturer

Infineon Technologies

Introduction

This product is a discrete semiconductor device in the form of a single N-Channel MOSFET transistor.

Product Features and Performance

60V Drain-to-Source Voltage

200mA Continuous Drain Current

5 Ohm On-Resistance

-55°C to 150°C Operating Temperature Range

45pF Input Capacitance

360mW Power Dissipation

5nC Gate Charge

MOSFET (Metal Oxide Semiconductor Field Effect Transistor) Technology

Product Advantages

High efficiency due to low on-resistance

Compact surface mount package

Wide temperature operating range

Suitable for switch mode power supplies, motor drives, and other power control applications

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 60V

Gate-to-Source Voltage (Vgs): ±20V

On-Resistance (Rds(on)): 5 Ohm @ 500mA, 10V

Drain Current (Id): 200mA @ 25°C

Input Capacitance (Ciss): 45pF @ 25V

Power Dissipation (Pd): 360mW

Quality and Safety Features

RoHS3 compliant

Suitable for reflow soldering

Reliable MOSFET design and manufacturing

Compatibility

This MOSFET is compatible with a wide range of power management and control applications.

Application Areas

Switch mode power supplies

Motor drives

Power control circuits

General purpose power switching

Product Lifecycle

This product is an active and commonly used MOSFET device. Replacements and upgrades are readily available from Infineon and other manufacturers.

Key Reasons to Choose This Product

High efficiency and low power loss due to low on-resistance

Compact surface mount package for space-constrained designs

Wide operating temperature range for harsh environments

Reliable MOSFET technology for long-lasting performance

Widely compatible with various power management applications