Manufacturer Part Number
SN7002IXTSA1
Manufacturer
Infineon Technologies
Introduction
This product is a discrete N-channel MOSFET transistor from Infineon Technologies.
Product Features and Performance
60V Drain-Source Voltage (Vdss)
±20V Gate-Source Voltage (Vgs)
5Ω On-Resistance (Rds(on)) at 500mA, 10V
200mA Continuous Drain Current (Id) at 25°C
32pF Input Capacitance (Ciss) at 30V
360mW Power Dissipation (Pd) at 25°C
Fast switching capability
Product Advantages
Low on-resistance for improved efficiency
High voltage rating for versatile applications
Small package size for compact designs
Wide temperature range for harsh environments
Key Technical Parameters
MOSFET Technology: N-Channel
Vgs(th) (Max): 1.8V at 26A
Drive Voltage (Max Rds(on), Min Rds(on)): 4.5V, 10V
Gate Charge (Qg) (Max): 0.9nC at 10V
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified for automotive applications
Compatibility
TO-236-3, SC-59, SOT-23-3 package
Surface mount design
Application Areas
Power supplies
Motor drives
Lighting control
Industrial and consumer electronics
Product Lifecycle
Currently in production
Replacement or upgrade parts available
Key Reasons to Choose This Product
Excellent performance-to-size ratio
Reliable operation in a wide temperature range
Cost-effective solution for high-volume applications
Proven quality and safety features for critical designs
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