Manufacturer Part Number
SKW15N60
Manufacturer
Infineon Technologies
Introduction
This is a discrete semiconductor product, specifically a single transistor IGBT (Insulated Gate Bipolar Transistor) from Infineon Technologies.
Product Features and Performance
NPT (Non-Punch-Through) IGBT technology
Operating temperature range of -55°C to 150°C
Maximum power dissipation of 139 W
Collector-Emitter Breakdown Voltage (VCES) of 600 V
Maximum Collector Current (IC) of 31 A
Low Collector-Emitter Saturation Voltage (VCE(on)) of 2.4 V
Fast Reverse Recovery Time (trr) of 279 ns
Gate Charge of 76 nC
Pulsed Collector Current (ICM) of 62 A
Turn-on/off delay times (td(on/off)) of 32 ns/234 ns
Product Advantages
High voltage and current handling capabilities
Low conduction and switching losses
Fast switching performance
Wide operating temperature range
RoHS3 compliant
Key Technical Parameters
IGBT Type: NPT
Voltage Collector Emitter Breakdown (Max): 600 V
Current Collector (Ic) (Max): 31 A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
Reverse Recovery Time (trr): 279 ns
Gate Charge: 76 nC
Current Collector Pulsed (Icm): 62 A
Switching Energy: 300J (on), 270J (off)
Td (on/off) @ 25°C: 32ns/234ns
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Through-hole mounting
Compatible with standard IGBT gate drive circuits
Application Areas
Power conversion and control applications
Motor drives
Welding equipment
Uninterruptible Power Supplies (UPS)
Induction heating
Renewable energy systems
Product Lifecycle
This product is currently available and actively supported by Infineon Technologies.
No information on potential discontinuation or availability of replacements/upgrades.
Key Reasons to Choose This Product
High voltage and current handling capabilities
Low conduction and switching losses for improved efficiency
Fast switching performance for high-speed applications
Wide operating temperature range for versatile use
RoHS3 compliance for environmental responsibility
Proven reliability and quality from Infineon Technologies