Manufacturer Part Number
SKW07N120
Manufacturer
Infineon Technologies
Introduction
Discrete Semiconductor Product
Transistors IGBTs Single
Product Features and Performance
ROHS3 Compliant
NPT IGBT Type
Voltage Collector Emitter Breakdown (Max): 1200 V
Current Collector (Ic) (Max): 16.5 A
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 8A
Reverse Recovery Time (trr): 60 ns
Gate Charge: 70 nC
Current Collector Pulsed (Icm): 27 A
Switching Energy: 1mJ
Td (on/off) @ 25°C: 27ns/440ns
Product Advantages
Power Rating: 125 W
Wide Operating Temperature Range: -55°C ~ 150°C (TJ)
Through Hole Mounting Type
Key Technical Parameters
IGBT Type: NPT
Voltage Collector Emitter Breakdown (Max): 1200 V
Current Collector (Ic) (Max): 16.5 A
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 8A
Reverse Recovery Time (trr): 60 ns
Gate Charge: 70 nC
Current Collector Pulsed (Icm): 27 A
Switching Energy: 1mJ
Td (on/off) @ 25°C: 27ns/440ns
Quality and Safety Features
ROHS3 Compliant
Compatibility
Standard Input Type
Application Areas
Suitable for a wide range of power electronics applications
Product Lifecycle
Current model, no information on discontinuation or replacements
Key Reasons to Choose This Product
High power rating of 125 W
Wide operating temperature range of -55°C to 150°C
Low Vce(on) of 3.6V @ 15V, 8A
Fast switching characteristics with low switching energy of 1mJ
Compact through-hole mounting design
SKW9N50TMFairchild (onsemi)