S29GL01GT11TFIV10 - Infineon Technologies

Manufacturer Part Number

S29GL01GT11TFIV10

Manufacturer

Infineon Technologies

Introduction

High-density NOR flash memory for embedded systems

Product Features and Performance

NOR Flash Technology

1 Gigabit Storage Capacity

128M x 8 Memory Organization

Parallel Memory Interface

Access Time: 110 nanoseconds

Write Cycle Time: 60 nanoseconds

Product Advantages

Robust storage solution for intense memory applications

Fast read and write operations

Reliable non-volatile memory

Key Technical Parameters

Memory Type: Non-Volatile FLASH

Voltage Supply: 1.65V to 3.6V

Operating Temperature Range: -40°C to 85°C

Quality and Safety Features

Extended temperature range for industrial applications

Compliance with industry safety standards

Compatibility

Parallel interface for compatibility with a wide range of microcontrollers

Application Areas

Embedded Systems

Automotive Electronics

Industrial Control Systems

Telecommunication Infrastructure

Product Lifecycle

Active status with continued manufacturer support

Several Key Reasons to Choose This Product

High-density flash memory provides ample storage for complex applications

Fast access and write times ensure responsive performance

Wide temperature range suited for harsh environments

Reliability and longevity of non-volatile NOR flash technology

Produced by Infineon, a leading semiconductor manufacturer

Directly compatible with a wide variety of existing systems requiring parallel interface flash memory

Supports legacy and current systems due to versatile voltage supply range

Part of the well-established GL-T series, iterating on proven technology with industry recognition

Availability of technical support and documentation from Infineon Technologies