Manufacturer Part Number
S29GL01GT10TFI010
Manufacturer
Infineon Technologies
Introduction
High-density, high-speed non-volatile flash memory device suitable for a broad range of applications.
Product Features and Performance
NOR Flash Memory technology
1-Gigabit memory size
128M x 8 memory organization
Parallel memory interface
60 ns Write Cycle Time for Word/Page
100 ns Access Time
Supports a supply voltage range of 2.7V to 3.6V
Industrial temperature range from -40°C to 85°C
Surface mount 56-TFSOP package
Product Advantages
Reliable data retention and endurance
Fast program and erase capabilities
Broad compatibility with microcontrollers and processors
Stable performance across a wide temperature range
Key Technical Parameters
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 1Gbit
Memory Organization: 128M x 8
Write Cycle Time - Word, Page: 60ns
Access Time: 100 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Quality and Safety Features
Designed to meet rigorous industry standards for quality and reliability
Compatibility
Compatible with a wide range of microcontrollers and processors
Application Areas
Industrial control systems
Automotive electronics
Networking and telecommunications
Consumer electronics
Embedded systems
Product Lifecycle
Active status, not indicated as nearing discontinuation
Replacement and upgrade options available
Several Key Reasons to Choose This Product
High data integrity and retention for critical applications
High-speed read and write operations enhance system performance
Proven reliability from a reputable semiconductor manufacturer
Versatility across different applications and industries
Supports wide industrial temperature range for harsh environments
Ease of design integration due to common surface mount packaging standards
Long product lifecycle and support from Infineon Technologies