Manufacturer Part Number
IRS21867STRPBF
Manufacturer
Infineon Technologies
Introduction
High-performance Half-Bridge Gate Driver
Product Features and Performance
Dual Independent Channels
IGBT and N-Channel MOSFET driving capability
Integrated Under-Voltage Lockout Protection
Bootstrap Operation up to 600 V
Product Advantages
High peak current drive capability of 4A source and sink
Fast rise and fall times for efficient switching
Wide operating temperature range -40°C to 150°C
CMOS/TTL compatible inputs for flexible control options
Key Technical Parameters
Driven Configuration: Half-Bridge
Number of Drivers: 2
Supply Voltage: 10V ~ 20V
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Peak Output Current: 4A source, 4A sink
Bootstrap High Side Voltage Max: 600 V
Rise / Fall Time: 22ns / 18ns
Quality and Safety Features
Under-Voltage Lockout for safe operation
Over-Temperature Protection for reliability
Robust design compliant with industry standards
Compatibility
IGBTs and N-Channel MOSFET compatibility
Suitable for CMOS, TTL logic systems
Application Areas
Motor Drives
Inverter Systems
Power Supply Modules
High-Frequency Switching Applications
Product Lifecycle
Status: Active
Continued support for replacement and upgrades
Several Key Reasons to Choose This Product
Supports a wide range of switching power devices
Robust design enabling use in extreme temperatures
Fast switching characteristics for high efficiency
Dual independent channels provide design flexibility
Designed by a reputable manufacturer in power management technology