Manufacturer Part Number
IRS21864STRPBF
Manufacturer
Infineon Technologies
Introduction
The IRS21864STRPBF is a high-performance power management integrated circuit (PMIC) gate driver designed for IGBT and N-Channel MOSFET applications.
Product Features and Performance
Independent channel operation
Designed for high-side or low-side configuration
Supports IGBT, N-Channel MOSFET gate types
Can handle a supply voltage from 10V to 20V
Non-inverting input type ensures simplified logic interfacing
Capable of sourcing and sinking 4A peak current
600V maximum voltage for high side with bootstrap arrangement
Rapid rise and fall times of 22ns and 18ns respectively
Operational over wide temperature range: -40°C to 150°C
Product Advantages
High reliability and performance consistency under diverse conditions
Flexibility in driving both high-side and low-side devices
Key Technical Parameters
Voltage Supply: 10V ~ 20V
Logic Voltage VIL, VIH: 0.8V, 2.5V
Current Peak Output (Source, Sink): 4A, 4A
High Side Voltage Max (Bootstrap): 600 V
Rise / Fall Time (Typ): 22ns, 18ns
Operating Temperature: -40°C ~ 150°C
Quality and Safety Features
Built to operate reliably across a wide temperature range
Robust construction suitable for demanding applications
Compatibility
Compatible with IGBT and N-channel MOSFET configurations
Application Areas
Suitable for use in advanced motor drive controllers, inverters, and switching power supplies in industrial and commercial settings
Product Lifecycle
Currently in active production status
Not nearing discontinuation, with sustained availability of replacements and upgrades
Several Key Reasons to Choose This Product
Dual driver flexibility allowing for diverse power management setups
High current handling capacity ideal for heavy-duty applications
Ultra-fast switching capabilities enhance overall device efficiency
High-temperature operational capability ensuring reliability in harsh environments
Strong performance in both simplicity of the driving signal and robust power handling capabilities