Manufacturer Part Number
IRLR3636TRPBF
Manufacturer
Infineon Technologies
Introduction
The IRLR3636TRPBF is a high-performance N-Channel HEXFET power MOSFET from Infineon Technologies.
Product Features and Performance
Low on-resistance (RDS(on) max: 6.8 mOhm @ 50A, 10V)
High drain current capability (Continuous Drain Current: 50A @ 25°C)
Low gate charge (Qg max: 49 nC @ 4.5V)
Fast switching speed
Wide operating temperature range (-55°C to 175°C)
Robust design with high reliability
Product Advantages
Excellent efficiency and low power losses
Compact and space-saving design
Suitable for high-power, high-frequency switching applications
Reliable performance in harsh environments
Key Technical Parameters
Drain-Source Voltage (VDS): 60V
Gate-Source Voltage (VGS): ±16V
Input Capacitance (Ciss): 3779 pF @ 50V
Power Dissipation (PD): 143W @ Tc
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Suitable for use in various power conversion and control applications, such as:
Switching power supplies
Motor drives
Inverters
Industrial and automotive electronics
Application Areas
High-power, high-frequency switching
High-efficiency power conversion
Industrial and automotive electronics
Product Lifecycle
The IRLR3636TRPBF is an active and widely used product, with no known plans for discontinuation. Replacement or upgrade options may be available from Infineon or other manufacturers.
Key Reasons to Choose This Product
Excellent efficiency and low power losses
High current handling capability
Fast switching speed
Robust and reliable performance
Compact and space-saving design
Suitable for a wide range of high-power, high-frequency applications
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