Manufacturer Part Number
IRLR3410TRPBF
Manufacturer
Infineon Technologies
Introduction
High-performance N-Channel MOSFET transistor
Suitable for various power conversion and control applications
Product Features and Performance
High voltage rating up to 100V
Low on-resistance (RDS(on)) of 105 mΩ
High continuous drain current of 17A
Fast switching speed
Low gate charge for efficient switching
Wide operating temperature range of -55°C to 175°C
Product Advantages
Excellent power efficiency due to low RDS(on)
Reliable performance in high-power applications
Compact surface-mount package for space-saving designs
Suitable for various power conversion and control applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 100V
Gate-Source Voltage (Vgs): ±16V
On-Resistance (RDS(on)): 105 mΩ @ 10A, 10V
Continuous Drain Current (ID): 17A
Input Capacitance (Ciss): 800 pF @ 25V
Power Dissipation (Pd): 79W
Quality and Safety Features
RoHS3 compliant
Reliable performance in industrial and automotive applications
Compatibility
Compatible with various power supply, motor control, and power conversion applications
Application Areas
Switch-mode power supplies
Motor drives
Power converters
Automotive electronics
Industrial control systems
Product Lifecycle
This product is currently in production and widely available
Replacements or upgrades may be available in the future as technology evolves
Key Reasons to Choose This Product
Excellent power efficiency and performance due to low RDS(on)
Reliable operation in a wide temperature range
Compact surface-mount package for space-saving designs
Suitable for a variety of high-power applications
Backed by Infineon's reputation for quality and reliability
IRLR3410TRLPBF MOSIR
IRLR3410PBFInternational RectifierHEXFET POWER MOSFET