IRLML6346TRPBF - Infineon Technologies

Manufacturer Part Number

IRLML6346TRPBF

Manufacturer

Infineon Technologies

Introduction

Discrete Semiconductor Product

N-Channel MOSFET Transistor

Product Features and Performance

Drain to Source Voltage (Vdss): 30 V

Vgs (Max): ±12 V

On-Resistance (Rds On): 63 mOhm @ 3.4A, 4.5V

Current Continuous Drain (Id): 3.4A @ 25°C

Input Capacitance (Ciss): 270 pF @ 24 V

Power Dissipation (Max): 1.3W

Product Advantages

Low on-resistance for high efficiency

High current handling capability

Suitable for switching and amplification applications

Key Technical Parameters

Technology: MOSFET (Metal Oxide)

FET Type: N-Channel

Vgs(th) (Max) @ Id: 1.1V @ 10A

Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V

Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 4.5 V

Quality and Safety Features

RoHS3 Compliant

Operating Temperature: -55°C ~ 150°C (TJ)

Compatibility

Packaging: Micro3/SOT-23, TO-236-3, SC-59, SOT-23-3

Supplier Device Package: Micro3/SOT-23

Series: HEXFET

Packaging: Tape & Reel (TR)

Application Areas

Switching and amplification circuits

Power management systems

Motor control applications

Automotive electronics

Product Lifecycle

Current product, no discontinuation plans

Replacements and upgrades available

Key Reasons to Choose This Product

High current handling and low on-resistance for efficient power conversion

Reliable and robust MOSFET design

Versatile packaging options for various applications

RoHS compliance for environmentally-friendly use

Supported by a well-established manufacturer, Infineon Technologies