Manufacturer Part Number
IRLML6302TRPBF
Manufacturer
Infineon Technologies
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
P-Channel MOSFET
20V Drain-Source Voltage
780mA Continuous Drain Current
600mΩ On-Resistance
97pF Input Capacitance
540mW Power Dissipation
-55°C to 150°C Operating Temperature Range
Product Advantages
Compact Surface Mount Package
Low On-Resistance
High Current Capability
Wide Operating Temperature Range
Key Technical Parameters
Drain-Source Voltage (Vdss): 20V
Gate-Source Voltage (Vgs): ±12V
On-Resistance (Rds(on)): 600mΩ
Drain Current (Id): 780mA
Input Capacitance (Ciss): 97pF
Power Dissipation (Pd): 540mW
Threshold Voltage (Vgs(th)): 1.5V
Quality and Safety Features
RoHS3 Compliant
Reliable MOSFET Technology
Compatibility
TO-236-3, SC-59, SOT-23-3 Package
Tape & Reel Packaging
Application Areas
Power Management
Amplifier Circuits
Switching Applications
Product Lifecycle
Currently in production
Replacements and upgrades available
Key Reasons to Choose this Product
Compact size and surface mount design
Low on-resistance for efficient power handling
High current capability for demanding applications
Wide operating temperature range for versatility
Reliable MOSFET technology and RoHS compliance