Manufacturer Part Number
IRLML5203
Manufacturer
Infineon Technologies
Introduction
Discrete Semiconductor Product
Transistor FET, MOSFET Single
Product Features and Performance
P-Channel MOSFET
Drain-Source Voltage (Vdss): 30V
Gate-Source Voltage (Vgs) Max: ±20V
On-Resistance (Rds(on)) Max: 98mΩ @ 3A, 10V
Continuous Drain Current (Id) @ 25°C: 3A
Input Capacitance (Ciss) Max: 510pF @ 25V
Power Dissipation Max: 1.25W
Product Advantages
Low On-Resistance for High Efficiency
Fast Switching Speed
Compact Surface Mount Packaging
Key Technical Parameters
MOSFET Technology
P-Channel FET Type
Threshold Voltage (Vgs(th)) Max: 2.5V @ 250μA
Gate Charge (Qg) Max: 14nC @ 10V
Quality and Safety Features
RoHS Non-Compliant
TO-236-3, SC-59, SOT-23-3 Package
Compatibility
Compatible with HEXFET Series
Application Areas
Switching Circuits
Power Supplies
Motor Drives
Amplifiers
Product Lifecycle
Established Product
Replacements and Upgrades Available
Key Reasons to Choose
High Efficiency due to Low On-Resistance
Fast Switching for High-Speed Applications
Compact Surface Mount Package for Space-Constrained Designs