Manufacturer Part Number
IRLML5103TRPBF
Manufacturer
Infineon Technologies
Introduction
This is a discrete semiconductor product, specifically a P-channel MOSFET transistor.
Product Features and Performance
Low on-resistance (RDSon) of 600 mOhm at 600 mA, 10V
Supports operating temperatures from -55°C to 150°C
Drain-to-source voltage (VDS) of up to 30V
Gate-to-source voltage (VGS) of up to ±20V
Continuous drain current (ID) of 760 mA at 25°C
Input capacitance (Ciss) of 75 pF at 25V
Power dissipation of up to 540 mW at 25°C
Product Advantages
Efficient power switching performance
Wide operating temperature range
High voltage and current handling capability
Compact surface-mount package
Key Technical Parameters
Technology: MOSFET (Metal Oxide Semiconductor Field-Effect Transistor)
FET Type: P-Channel
Threshold voltage (VGS(th)): 1V at 250 μA
Drive voltage range: 4.5V to 10V
Gate charge (Qg): 5.1 nC at 10V
Quality and Safety Features
RoHS3 compliant
Micro3/SOT-23 package
Compatibility
Suitable for a variety of electronic circuits and applications that require a P-channel MOSFET
Application Areas
Power management
Switching circuits
Load switching
Amplifier circuits
Product Lifecycle
This product is currently in production and available for purchase.
Key Reasons to Choose This Product
Excellent power efficiency and switching performance
Wide operating temperature range for diverse applications
Compact surface-mount package for space-constrained designs
RoHS3 compliance for environmentally-conscious applications
Proven reliability and quality from Infineon Technologies
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