Manufacturer Part Number
IRLML0040TRPBF
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET transistor for power management applications.
Product Features and Performance
Low on-resistance (RDS(on)) of 56 mΩ at 3.6 A and 10 V
High current capability of 3.6 A continuous drain current at 25°C
Low gate charge (Qg) of 3.9 nC at 4.5 V for fast switching
Wide operating temperature range of -55°C to 150°C
Product Advantages
Efficient power conversion with low conduction losses
Reliable and robust performance
Suitable for high-frequency and high-current applications
Key Technical Parameters
Drain-to-Source Voltage (VDS): 40 V
Gate-to-Source Voltage (VGS): ±16 V
Threshold Voltage (VGS(th)): 2.5 V at 25 A
Input Capacitance (Ciss): 266 pF at 25 V
Power Dissipation (PD): 1.3 W at 25°C
Quality and Safety Features
RoHS3 compliant
Qualified to AEC-Q101 automotive standard
Compatibility
Suitable for surface mount applications
Compatible with HEXFET series
Application Areas
Power management circuits
Motor drives
Switching power supplies
Automotive electronics
Product Lifecycle
Currently in production
Replacement or upgrade options available
Key Reasons to Choose This Product
Excellent power efficiency with low on-resistance
High current capability for demanding applications
Fast switching performance with low gate charge
Reliable and robust design for wide temperature operation
RoHS3 compliance and automotive-grade quality