Manufacturer Part Number
IRLML0030TRPBF
Manufacturer
Infineon Technologies
Introduction
The IRLML0030TRPBF is a N-Channel Enhancement Mode Power MOSFET from Infineon Technologies. It is part of the HEXFET series and designed for a wide range of power switching applications.
Product Features and Performance
N-Channel MOSFET
30V Drain-Source Voltage
3A Continuous Drain Current at 25°C
27mOhm Maximum On-Resistance at 5.2A, 10V
382pF Maximum Input Capacitance at 15V
3W Maximum Power Dissipation
Wide Operating Temperature Range: -55°C to 150°C
Product Advantages
Low on-resistance for efficient power switching
High current handling capability
Small footprint and surface mount package
Key Technical Parameters
Drain-Source Voltage (Vdss): 30V
Gate-Source Voltage (Vgs Max): ±20V
On-Resistance (Rds(on) Max): 27mOhm @ 5.2A, 10V
Threshold Voltage (Vgs(th) Max): 2.3V @ 25A
Input Capacitance (Ciss Max): 382pF @ 15V
Power Dissipation (Max): 1.3W
Quality and Safety Features
RoHS3 Compliant
Reliable MOSFET technology
Compatibility
Suitable for a wide range of power switching applications
Application Areas
Power supplies
Motor drives
Switching regulators
Audio amplifiers
Automotive electronics
Product Lifecycle
Currently in production
Replacement parts and upgrades available
Key Reasons to Choose This Product
High current handling and low on-resistance for efficient power switching
Small package size and surface mount design for compact applications
Wide operating temperature range for versatile use
Reliable MOSFET technology with RoHS3 compliance for quality assurance