Manufacturer Part Number
IRLHS6376TRPBF
Manufacturer
Infineon Technologies
Introduction
This is a dual N-channel MOSFET transistor in a 6-PQFN (2x2) package from Infineon Technologies.
Product Features and Performance
2 N-Channel MOSFETs in a single package
30V Drain-Source Voltage (Vdss)
63mΩ maximum On-Resistance (Rds(on)) at 3.4A, 4.5V
6A maximum Continuous Drain Current (Id) at 25°C
270pF maximum Input Capacitance (Ciss) at 25V
1V maximum Gate Threshold Voltage (Vgs(th)) at 10A
8nC maximum Gate Charge (Qg) at 4.5V
Product Advantages
Compact 6-PQFN (2x2) surface mount package
Logic level gate drive
Excellent thermal performance
Suitable for a wide range of power management applications
Key Technical Parameters
Technology: MOSFET (Metal Oxide)
Configuration: 2 N-Channel (Dual)
Package: 6-VDFN Exposed Pad
Operating Temperature: -55°C to 150°C (TJ)
Power Rating: 1.5W
Quality and Safety Features
RoHS3 compliant
Tape and Reel packaging
Compatibility
This MOSFET is compatible with a wide range of power management and control applications.
Application Areas
Power management circuits
Motor control
Switching power supplies
Battery chargers
General-purpose power switching
Product Lifecycle
The IRLHS6376TRPBF is an active product and is not nearing discontinuation. Replacement or upgrade options may be available from Infineon Technologies.
Key Reasons to Choose This Product
Compact and efficient dual-channel design
Excellent thermal performance and reliability
Suitable for a wide range of power management applications
Competitive pricing and availability from a leading semiconductor manufacturer
