IRLHS6376TRPBF - Infineon Technologies

Manufacturer Part Number

IRLHS6376TRPBF

Manufacturer

Infineon Technologies

Introduction

This is a dual N-channel MOSFET transistor in a 6-PQFN (2x2) package from Infineon Technologies.

Product Features and Performance

2 N-Channel MOSFETs in a single package

30V Drain-Source Voltage (Vdss)

63mΩ maximum On-Resistance (Rds(on)) at 3.4A, 4.5V

6A maximum Continuous Drain Current (Id) at 25°C

270pF maximum Input Capacitance (Ciss) at 25V

1V maximum Gate Threshold Voltage (Vgs(th)) at 10A

8nC maximum Gate Charge (Qg) at 4.5V

Product Advantages

Compact 6-PQFN (2x2) surface mount package

Logic level gate drive

Excellent thermal performance

Suitable for a wide range of power management applications

Key Technical Parameters

Technology: MOSFET (Metal Oxide)

Configuration: 2 N-Channel (Dual)

Package: 6-VDFN Exposed Pad

Operating Temperature: -55°C to 150°C (TJ)

Power Rating: 1.5W

Quality and Safety Features

RoHS3 compliant

Tape and Reel packaging

Compatibility

This MOSFET is compatible with a wide range of power management and control applications.

Application Areas

Power management circuits

Motor control

Switching power supplies

Battery chargers

General-purpose power switching

Product Lifecycle

The IRLHS6376TRPBF is an active product and is not nearing discontinuation. Replacement or upgrade options may be available from Infineon Technologies.

Key Reasons to Choose This Product

Compact and efficient dual-channel design

Excellent thermal performance and reliability

Suitable for a wide range of power management applications

Competitive pricing and availability from a leading semiconductor manufacturer