Manufacturer Part Number
IRLHS6342TRPBF
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET transistor suitable for a wide range of power management and switching applications.
Product Features and Performance
Low on-resistance of 15.5 mΩ at 8.5 A, 4.5 V
High current capability of 8.7 A continuous at 25°C (Ta) and 19 A at 25°C (Tc)
Low input capacitance of 1019 pF at 25 V
Wide operating temperature range of -55°C to 150°C (TJ)
Fast switching with low gate charge of 11 nC at 4.5 V
Product Advantages
Excellent power efficiency due to low on-resistance
High current handling capability for demanding applications
Wide temperature tolerance for versatile use
Fast switching for high-frequency power conversion
Key Technical Parameters
Drain to Source Voltage (Vdss): 30 V
Gate-Source Voltage (Vgs): ±12 V
Power Dissipation (Max): 2.1 W (Ta)
Threshold Voltage (Vgs(th)): 1.1 V @ 10 A
FET Type: N-Channel
Quality and Safety Features
ROHS3 Compliant
6-PQFN (2x2) package for efficient heat dissipation
Compatibility
Suitable for a variety of power management and switching applications, including DC-DC converters, motor drives, and power supplies.
Application Areas
Power management
Motor control
Power supplies
DC-DC converters
Product Lifecycle
This product is an active, in-production device from Infineon Technologies.
Replacements and upgrades may be available from Infineon or other manufacturers.
Key Reasons to Choose This Product
Excellent power efficiency and high current capability for demanding applications
Wide temperature range for versatile use
Fast switching performance for high-frequency power conversion
Compact and thermally efficient 6-PQFN (2x2) package