Manufacturer Part Number
IRLB8314PBF
Manufacturer
Infineon Technologies
Introduction
The IRLB8314PBF is a high-performance N-channel MOSFET transistor from Infineon Technologies.
Product Features and Performance
Operates in the temperature range of -55°C to 175°C
Supports a drain-to-source voltage of up to 30V
Allows a maximum gate-to-source voltage of ±20V
Features a low on-resistance of 2.4mΩ at 68A and 10V
Capable of handling a continuous drain current of 171A at 25°C (Tc)
Offers a maximum power dissipation of 125W (Tc)
Has an input capacitance (Ciss) of 5050pF at 15V
Product Advantages
Excellent thermal performance
High current capability
Low on-resistance for efficient power delivery
Suitable for a wide range of high-power applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 2.4mΩ @ 68A, 10V
Continuous Drain Current (Id): 171A @ 25°C (Tc)
Power Dissipation (Ptot): 125W (Tc)
Input Capacitance (Ciss): 5050pF @ 15V
Quality and Safety Features
RoHS3 compliant
TO-220-3 package for reliable thermal management
Compatibility
Through-hole mounting
Compatible with HEXFET series
Application Areas
High-power switching applications
Motor control
Power supplies
Inverters
Converters
Product Lifecycle
This product is currently in production
Replacements or upgrades may be available in the future
Key Reasons to Choose This Product
Excellent thermal performance for high-power applications
Low on-resistance for efficient power delivery
High current capability for demanding applications
Wide operating temperature range of -55°C to 175°C
RoHS3 compliance for environmental sustainability