IRLB3036PBF - Infineon Technologies

Manufacturer Part Number

IRLB3036PBF

Manufacturer

Infineon Technologies

Introduction

High-performance N-channel MOSFET transistor with low on-resistance and fast switching capabilities.

Product Features and Performance

Extremely low on-resistance of 2.4 mOhm at 165A, 10V

High current handling capacity of 195A continuous drain current at 25°C

Wide operating temperature range of -55°C to 175°C

Fast switching with low gate charge of 140 nC at 4.5V

Robust design with high drain-source voltage of 60V

Product Advantages

Excellent power efficiency due to ultra-low on-resistance

Reliable high-current operation

Suitable for a wide range of applications and environments

Fast and efficient switching for improved system performance

Key Technical Parameters

Drain-Source Voltage (Vdss): 60V

Gate-Source Voltage (Vgs): ±16V

On-Resistance (Rds(on)): 2.4 mOhm @ 165A, 10V

Continuous Drain Current (Id): 195A @ 25°C

Input Capacitance (Ciss): 11210 pF @ 50V

Power Dissipation (Tc): 380W

Quality and Safety Features

RoHS3 compliant

Robust TO-220AB package for reliable operation

Designed and manufactured to high quality standards

Compatibility

Suitable for a wide range of power electronics and motor control applications

Application Areas

Power supplies

Motor drives

Inverters

Switching regulators

Industrial automation and control systems

Product Lifecycle

This product is an active, currently available MOSFET solution from Infineon.

Replacement options and upgrades may be available as technology evolves.

Key Reasons to Choose This Product

Extremely low on-resistance for high efficiency

High current handling capability for demanding applications

Wide operating temperature range for reliable performance

Fast switching for improved system responsiveness

Robust and safe design for long-term durability