Manufacturer Part Number
IRGP6630DPBF
Manufacturer
Infineon Technologies
Introduction
High-power discrete IGBT transistor
Suitable for switching applications in power electronics
Product Features and Performance
Optimized on-state and switching characteristics
Low conduction and switching losses
High current handling capability
Fast switching speed
High blocking voltage
Product Advantages
Excellent thermal performance
Robust design for reliable operation
Suitable for a wide range of power electronics applications
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 600 V
Current Collector (Ic) (Max): 47 A
Vce(on) (Max) @ Vge, Ic: 1.95 V @ 15 V, 18 A
Reverse Recovery Time (trr): 70 ns
Gate Charge: 30 nC
Current Collector Pulsed (Icm): 54 A
Switching Energy: 75 J (on), 350 J (off)
Td (on/off) @ 25°C: 40 ns / 95 ns
Quality and Safety Features
Designed for high reliability and safety
Robust construction for rugged operation
Complies with relevant industry standards
Compatibility
Suitable for use in various power electronics applications
Can be integrated into a wide range of power conversion systems
Application Areas
Inverters
Converters
Motor drives
Welding equipment
Uninterruptible power supplies (UPS)
Solar inverters
Industrial automation systems
Product Lifecycle
Currently in active production
No immediate plans for discontinuation
Replacement and upgrade options available from the manufacturer
Key Reasons to Choose This Product
Excellent power handling and efficiency
Reliable and robust design for long-term operation
Suitable for a wide range of power electronics applications
Optimized switching characteristics for improved system performance
Availability of technical support and resources from the manufacturer
IRGP50B60PD1-EIR