Manufacturer Part Number
IRGP50B60PD1PBF
Manufacturer
Infineon Technologies
Introduction
High-power discrete IGBT (Insulated Gate Bipolar Transistor) for industrial applications
Product Features and Performance
600V blocking voltage
75A continuous collector current
390W maximum power dissipation
Reverse recovery time (trr) of 42ns
Gate charge of 308nC
Pulsed collector current of 150A
Turn-on/off delay times of 30ns/130ns
Product Advantages
Optimized for high-frequency, high-power switching applications
Robust and reliable performance
Compact TO-247AC package
Key Technical Parameters
Collector-Emitter Breakdown Voltage (VCES): 600V
Collector Current (IC): 75A
Power Dissipation (PD): 390W
Junction Temperature (TJ): -55°C to 150°C
Quality and Safety Features
RoHS3 compliant
Reliable and durable design
Compatibility
Compatible with various industrial power electronics applications
Application Areas
Switch-mode power supplies
Motor drives
Welding equipment
Induction heating
Industrial automation
Product Lifecycle
Current product, no discontinuation planned
Suitable replacement or upgrade options available if needed
Key Reasons to Choose This Product
High power handling capability
Fast switching performance
Robust and reliable design
Optimized for high-frequency, high-power applications
Compact and easy to integrate TO-247AC package