Manufacturer Part Number
IRG4PF50WDPBF
Manufacturer
Infineon Technologies
Introduction
High-performance insulated-gate bipolar transistor (IGBT) for industrial and consumer applications
Product Features and Performance
Optimized for high-frequency switching
Low conduction and switching losses
High power density
Fast switching speed
Product Advantages
Reliable performance
Compact design
Efficient power conversion
Key Technical Parameters
Voltage rating: 900V
Current rating: 51A
Low Vce(on): 2.7V @ 15V, 28A
Fast reverse recovery time: 90ns
High power handling: 200W
Quality and Safety Features
RoHS3 compliant
TO-247AC package for reliable operation
Compatibility
Suitable for a wide range of industrial and consumer applications
Application Areas
Motor drives
Power supplies
Inverters
Welding equipment
Induction heating
Solar power systems
Product Lifecycle
Currently available, no plans for discontinuation
Replacement or upgrade options available from Infineon
Key Reasons to Choose
High efficiency and performance
Reliable and durable design
Compact and space-saving
Extensive application support
Backed by Infineon's expertise in power semiconductors
IRG4PF50WIR