Manufacturer Part Number
IRG4PC50WPBF
Manufacturer
Infineon Technologies
Introduction
This product is a discrete semiconductor device, specifically a single transistor in the Insulated-Gate Bipolar Transistor (IGBT) category.
Product Features and Performance
Power rating of 200 W
Collector-Emitter Breakdown Voltage up to 600 V
Collector Current (Ic) up to 55 A
Low Collector-Emitter Saturation Voltage (Vce(on)) of 2.3 V at 15 V, 27 A
Fast switching with Turn-on/off Delay Times of 46 ns/120 ns
High Collector Pulsed Current of 220 A
Wide Operating Temperature Range of -55°C to 150°C
Product Advantages
High power handling capability
Low conduction losses
Fast switching performance
Robust design for wide temperature operation
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 600 V
Collector Current (Ic): 55 A
Collector-Emitter Saturation Voltage (Vce(on)): 2.3 V
Gate Charge: 180 nC
Switching Energy: 80 J (on), 320 J (off)
Switching Delay Times: 46 ns (on), 120 ns (off)
Quality and Safety Features
TO-247AC package for reliable and secure mounting
Compliant with relevant safety and quality standards
Compatibility
This IGBT transistor is designed for use in a wide range of power electronics applications.
Application Areas
Motor drives
Power supplies
Inverters
Renewable energy systems
Industrial automation and control
Product Lifecycle
This product is currently in active production and available for purchase. Replacement or upgrade options may be available from the manufacturer in the future.
Key Reasons to Choose This Product
High power handling capacity
Efficient performance with low conduction losses
Fast switching for improved system responsiveness
Wide operating temperature range for versatile applications
Robust and reliable package design
