Manufacturer Part Number
IRFU5410PBF
Manufacturer
Infineon Technologies
Introduction
The IRFU5410PBF is a P-Channel MOSFET transistor that is part of Infineon's HEXFET series.
Product Features and Performance
100V Drain-to-Source Voltage (Vdss)
±20V Gate-to-Source Voltage (Vgs)
205mOhm maximum On-State Resistance (Rds(on)) @ 7.8A, 10V
13A Continuous Drain Current (Id) @ 25°C
760pF maximum Input Capacitance (Ciss) @ 25V
66W Power Dissipation (Pd) @ Tc
-55°C to 150°C Operating Temperature Range
Product Advantages
Low on-resistance for high efficiency
Robust and reliable MOSFET design
Suitable for a wide range of power switching applications
Key Technical Parameters
MOSFET Technology
P-Channel FET Type
4V maximum Gate Threshold Voltage (Vgs(th)) @ 250A
58nC maximum Gate Charge (Qg) @ 10V
Quality and Safety Features
RoHS3 Compliant
IPAK (TO-251AA) package
Compatibility
Through-hole mounting
Application Areas
Power supplies
Motor drives
Switching regulators
Amplifiers
Relay drivers
Product Lifecycle
Current production, no plans for discontinuation
Key Reasons to Choose
Excellent performance and efficiency
Robust and reliable MOSFET design
Wide operating temperature range
Suitable for various power switching applications
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