Manufacturer Part Number
IRFU5305PBF
Manufacturer
Infineon Technologies
Introduction
The IRFU5305PBF is a P-channel MOSFET transistor from Infineon Technologies. It belongs to the HEXFET series and is designed for power switching applications.
Product Features and Performance
55V Drain-to-Source Voltage (Vdss)
±20V Gate-to-Source Voltage (Vgs)
65mΩ Maximum On-Resistance (Rds(on)) at 16A, 10V
31A Continuous Drain Current (Id) at 25°C case temperature
1200pF Maximum Input Capacitance (Ciss) at 25V
110W Maximum Power Dissipation at 25°C case temperature
P-Channel MOSFET technology
Product Advantages
Low on-resistance for efficient power switching
High drain current capability
Wide operating temperature range (-55°C to 175°C)
Suitable for a variety of power management applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 55V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 65mΩ @ 16A, 10V
Continuous Drain Current (Id): 31A @ 25°C
Input Capacitance (Ciss): 1200pF @ 25V
Power Dissipation (Tc): 110W
Quality and Safety Features
RoHS3 compliant
IPAK (TO-251AA) package
Compatibility
Through-hole mounting
Application Areas
Power switching
Power management
Automotive electronics
Industrial control
Product Lifecycle
Currently available
No information on discontinuation or replacement
Several Key Reasons to Choose This Product
Efficient power switching with low on-resistance
High drain current capability
Wide operating temperature range
Suitable for a variety of power management applications
RoHS3 compliance for environmental safety
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