Manufacturer Part Number
IRFU13N20DPBF
Manufacturer
Infineon Technologies
Introduction
The IRFU13N20DPBF is a high-performance N-Channel MOSFET transistor designed for use in a variety of power electronics and switching applications.
Product Features and Performance
High drain-to-source voltage rating of 200V
Low on-resistance of 235mΩ @ 8A, 10V
Continuous drain current of 13A at 25°C case temperature
Wide operating temperature range of -55°C to 175°C
Low input capacitance of 830pF @ 25V
High power dissipation of 110W at 25°C case temperature
Product Advantages
Excellent efficiency and low power loss
Reliable and robust design
Suitable for high-voltage, high-current applications
Versatile and flexible in use
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 200V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 235mΩ @ 8A, 10V
Continuous Drain Current (Id): 13A @ 25°C
Input Capacitance (Ciss): 830pF @ 25V
Power Dissipation (Pd): 110W @ 25°C
Quality and Safety Features
RoHS3 compliant
Manufactured in a high-quality, certified facility
Compatibility
Suitable for use in a wide range of power electronics applications
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial and automotive electronics
Product Lifecycle
The IRFU13N20DPBF is an actively supported product with no plans for discontinuation.
Replacement or upgrade options may be available from Infineon or other manufacturers.
Key Reasons to Choose This Product
Excellent performance and efficiency
Robust and reliable design
Wide range of applications
Availability of technical support and resources from Infineon
Compliance with relevant safety and environmental standards