Manufacturer Part Number
IRFU120NPBF
Manufacturer
Infineon Technologies
Introduction
The IRFU120NPBF is a discrete semiconductor product, specifically a Transistor - FET, MOSFET - Single device.
Product Features and Performance
N-Channel MOSFET
100V Drain to Source Voltage
±20V Gate to Source Voltage
210mOhm Maximum On-Resistance at 5.6A, 10V
4A Continuous Drain Current at 25°C
330pF Maximum Input Capacitance at 25V
48W Maximum Power Dissipation at Tc
4V Maximum Threshold Voltage at 250A
10V Drive Voltage for Minimum and Maximum On-Resistance
25nC Maximum Gate Charge at 10V
Product Advantages
Efficient power switching
High voltage handling capability
Low on-resistance
High current capability
Wide temperature range
Key Technical Parameters
Drain to Source Voltage (Vdss): 100V
Gate to Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 210mOhm
Continuous Drain Current (Id): 9.4A
Input Capacitance (Ciss): 330pF
Power Dissipation (Pd): 48W
Threshold Voltage (Vgs(th)): 4V
Gate Charge (Qg): 25nC
Quality and Safety Features
RoHS3 compliant
Designed for reliable operation
Compatibility
Through-hole mounting (TO-251-3 Short Leads, IPak, TO-251AA)
Application Areas
Switching power supplies
Motor drives
Industrial controls
Automotive electronics
Product Lifecycle
Currently available
No indications of discontinuation
Replacements and upgrades may be available
Key Reasons to Choose This Product
Excellent power switching performance
Robust voltage and current handling
Low on-resistance for efficient operation
Wide temperature range for versatile applications
Industry-standard packaging for easy integration
Reliable and RoHS-compliant design
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