Manufacturer Part Number
IRFHM8329TRPBF
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel power MOSFET with very low on-resistance
Product Features and Performance
Very low on-resistance for efficient power conversion
High current handling capability
Fast switching speed
Extremely low gate charge for efficient drive
Robust and reliable design
Product Advantages
Highly efficient power conversion
Compact design with high power density
Excellent thermal management
Reliable and durable performance
Key Technical Parameters
Drain-to-source voltage (Vdss): 30 V
Gate-to-source voltage (Vgs): ±20 V
On-resistance (Rds(on)): 6.1 mΩ @ 20 A, 10 V
Continuous drain current (Id): 16 A (Ta), 57 A (Tc)
Input capacitance (Ciss): 1710 pF @ 10 V
Power dissipation: 2.6 W (Ta), 33 W (Tc)
Quality and Safety Features
RoHS3 compliant
Robust and reliable design for long-term performance
Compatibility
Compatible with a wide range of power electronic applications
Application Areas
Switching power supplies
Motor drives
Inverters
Power amplifiers
Industrial and consumer electronics
Product Lifecycle
Currently in production
Replacements or upgrades may be available in the future
Key Reasons to Choose This Product
Highly efficient power conversion for better system performance
Compact size and high power density for space-constrained designs
Excellent thermal management for reliable operation
Fast switching speed and low gate charge for efficient drive
Robust and durable design for long-term reliability