Manufacturer Part Number
IRFHM830TRPBF
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel power MOSFET transistor
Product Features and Performance
Optimized for efficient power conversion and control applications
Low on-resistance for reduced power losses
Fast switching for improved efficiency
High power density and rugged design
Product Advantages
Efficient power conversion
Compact design
Reliable performance
Key Technical Parameters
Drain to Source Voltage (Vdss): 30 V
On-resistance (Rds(on)): 3.8 mΩ
Continuous Drain Current (Id): 21 A (Ta), 40 A (Tc)
Input Capacitance (Ciss): 2155 pF
Power Dissipation: 2.7 W (Ta), 37 W (Tc)
Operating Temperature: -55°C to 150°C
Quality and Safety Features
RoHS3 compliant
Robust and reliable design
Compatibility
Suitable for a wide range of power conversion and control applications
Application Areas
Switch-mode power supplies
Motor drives
Industrial and consumer electronics
Product Lifecycle
Currently available, no discontinuation plans
Key Reasons to Choose This Product
Efficient power conversion with low on-resistance
Fast switching for improved efficiency
Compact and reliable design
Versatile application capabilities