Manufacturer Part Number
IRFH5215TRPBF
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel HEXFET power MOSFET with low on-resistance and fast switching characteristics. Suitable for various power conversion and control applications.
Product Features and Performance
High power density and efficiency
Extremely low on-resistance for low conduction losses
Fast switching for high-frequency operation
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent thermal management capability
Robust design for reliable performance
Optimized for high-frequency switching applications
Supports high current and voltage operation
Key Technical Parameters
Drain to Source Voltage (Vdss): 150V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 58mΩ @ 16A, 10V
Continuous Drain Current (Id): 5A (Ta), 27A (Tc)
Input Capacitance (Ciss): 1350pF @ 50V
Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
Quality and Safety Features
Compliant with RoHS 3 directive
Reliable and rugged design for industrial applications
Robust ESD protection
Compatibility
Suitable for various power conversion and control applications
Compatible with a wide range of electronic systems and circuits
Application Areas
Switch-mode power supplies
Motor drives
Lighting control
Industrial automation
Renewable energy systems
Product Lifecycle
Currently available and actively supported by the manufacturer
No information on discontinuation or replacement plans
Key Reasons to Choose This Product
Excellent power efficiency and thermal management
Fast switching performance for high-frequency operation
Robust and reliable design for industrial applications
Wide operating temperature range and compatibility
Optimized for high current and voltage applications