Manufacturer Part Number
IRFH5210TRPBF
Manufacturer
Infineon Technologies
Introduction
High-performance, high-power density N-channel MOSFET in a PowerVDFN package for high-frequency switching applications
Product Features and Performance
100V drain-source voltage rating
Ultra-low on-resistance of 14.9mOhm
Continuous drain current of 10A at 25°C ambient temperature, 55A at 25°C case temperature
High power dissipation of 3.6W at 25°C ambient temperature, 104W at 25°C case temperature
Tight Vgs(th) control for reliable and repeatable performance
Fast switching speed with low gate charge of 59nC at 10V
Product Advantages
Optimized for high-frequency, high-power switching applications
Excellent power density and thermal performance
Reliable and repeatable performance
Key Technical Parameters
100V drain-source voltage
±20V gate-source voltage
9mOhm on-resistance
10A continuous drain current at 25°C ambient, 55A at 25°C case
6W power dissipation at 25°C ambient, 104W at 25°C case
-55°C to 150°C operating temperature range
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Compatible with various high-frequency, high-power switching applications
Application Areas
High-frequency, high-power switching applications, such as power supplies, motor drives, and industrial automation
Product Lifecycle
Current product, no plans for discontinuation
Replacements and upgrades available as needed
Several Key Reasons to Choose This Product
Excellent power density and thermal performance
Reliable and repeatable performance
Fast switching speed with low gate charge
Optimized for high-frequency, high-power switching applications
RoHS3 compliant and designed to high quality standards