Manufacturer Part Number
IRFB5615PBF
Manufacturer
Infineon Technologies
Introduction
The IRFB5615PBF is a high-performance N-channel MOSFET transistor with a drain-to-source voltage (Vdss) of 150V and a continuous drain current (Id) of 35A at 25°C.
Product Features and Performance
Very low on-state resistance (RDS(on)) of 39mΩ
High switching speed and low gate charge (Qg) of 40nC
Wide operating temperature range of -55°C to 175°C
Excellent thermal performance with a maximum power dissipation of 144W
Product Advantages
Efficient power switching and control
Suitable for high-power and high-frequency applications
Robust design with high reliability
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 150V
Gate-to-Source Voltage (Vgs): ±20V
Continuous Drain Current (Id): 35A at 25°C
On-State Resistance (RDS(on)): 39mΩ
Input Capacitance (Ciss): 1750pF
Gate Charge (Qg): 40nC
Quality and Safety Features
RoHS3 compliant
Suitable for industrial and automotive applications
Compatibility
TO-220AB package
Compatible with various power supply and control circuits
Application Areas
Power supplies
Motor drives
Switching regulators
Inverters
Converters
Product Lifecycle
This product is an active and widely available MOSFET transistor from Infineon Technologies.
Replacements and upgrades are readily available from Infineon and other manufacturers.
Key Reasons to Choose This Product
Excellent efficiency and performance for high-power, high-frequency applications
Robust and reliable design with a wide operating temperature range
RoHS3 compliance for use in various industries
Compatibility with common power electronic circuits and systems
Availability and support from a reputable manufacturer, Infineon Technologies
IRFB61N15DIR