Manufacturer Part Number
IRFB52N15DPBF
Manufacturer
Infineon Technologies
Introduction
This product is a high-performance N-Channel MOSFET transistor from Infineon Technologies.
Product Features and Performance
Low on-resistance (RDS(on) of 32 mOhm)
High drain current capacity (51A continuous at 25°C)
Wide operating temperature range (-55°C to 175°C)
Low gate charge (Qg of 89 nC)
Fast switching speed
Product Advantages
Excellent power handling capability
Efficient power conversion
Reliable performance in high-temperature environments
Improved energy efficiency in power electronics applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 150V
Gate-Source Voltage (Vgs): ±30V
Continuous Drain Current (Id): 51A
On-State Resistance (RDS(on)): 32 mOhm
Input Capacitance (Ciss): 2770 pF
Power Dissipation: 3.8W (Ta), 230W (Tc)
Quality and Safety Features
RoHS3 compliant
Reliable and robust design
Stringent quality control measures
Compatibility
This MOSFET is compatible with a wide range of power electronics and industrial applications.
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Automotive electronics
Industrial automation
Product Lifecycle
This product is an active and widely used component. No discontinuation or replacement plans are currently known.
Key Reasons to Choose This Product
Excellent power handling and efficiency
Reliable performance in high-temperature environments
Fast switching speed for improved energy efficiency
Robust and RoHS-compliant design
Compatibility with a wide range of power electronics applications