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Home Products Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single~~IRF9530NSTRLPBF~~

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IRF9530NSTRLPBF - Infineon Technologies

Manufacturer Part Number: IRF9530NSTRLPBF

Manufacturer: Infineon Technologies

Allelco Part Number: 32D-IRF9530NSTRLPBF

ECAD Model

Parts Description: MOSFET P-CH 100V 14A D2PAK

Detailed Description

Package: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Data sheet: ~~IRF9530NSTRLPBF.pdf~~

RoHs Status: ROHS3 Compliant

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In stock: 36240

Specifications

IRF9530NSTRLPBF Tech Specifications
Infineon Technologies - IRF9530NSTRLPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies - IRF9530NSTRLPBF

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Vgs(th) (Max) @ Id	4V @ 250µA
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
Supplier Device Package	D2PAK
Series	HEXFET®
Rds On (Max) @ Id, Vgs	200mOhm @ 8.4A, 10V
Power Dissipation (Max)	3.8W (Ta), 79W (Tc)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package	Tape & Reel (TR)

Product Attribute	Attribute Value
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Input Capacitance (Ciss) (Max) @ Vds	760 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	58 nC @ 10 V
FET Type	P-Channel
FET Feature	-
Drive Voltage (Max Rds On, Min Rds On)	10V
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	14A (Tc)
Base Product Number	IRF9530

Parts Introduction

Manufacturer Part Number

IRF9530NSTRLPBF

Manufacturer

Infineon Technologies

Introduction

The IRF9530NSTRLPBF is a high-performance, P-channel power MOSFET transistor suitable for a variety of power management and control applications.

Product Features and Performance

100V drain-source voltage rating

Low on-resistance (200mOhm max @ 8.4A, 10V)

High current capability (14A continuous drain current)

Fast switching speed

Wide operating temperature range (-55°C to 175°C)

Low gate charge (58nC max @ 10V)

Surface mount D2PAK package

Product Advantages

Excellent efficiency and power density

Reliable and robust design

Versatile for a wide range of applications

Key Technical Parameters

Drain-Source Voltage (Vdss): 100V

Gate-Source Voltage (Vgs): ±20V

On-Resistance (Rds(on)): 200mOhm max

Continuous Drain Current (Id): 14A

Input Capacitance (Ciss): 760pF max

Power Dissipation: 3.8W (Ta), 79W (Tc)

Quality and Safety Features

RoHS3 compliant

Qualified to military and aerospace standards

Compatibility

Suitable for use in a variety of power management and control applications

Application Areas

Power supplies

Motor drives

Lighting controls

Automotive electronics

Industrial automation

Product Lifecycle

Currently in production

Replacements and upgrades available

Key Reasons to Choose This Product

High performance and efficiency

Reliable and robust design

Versatile for a wide range of applications

Compliance with industry standards

Availability of replacements and upgrades

Parts with Similar Specifications

The three parts on the right have similar specifications to Infineon Technologies IRF9530NSTRLPBF

Product Attribute
Part Number	IRF9530NSTRLPBF	IRF9530STRRPBF	IRF9531	IRF9530STRLPBF
Manufacturer	Infineon Technologies	Vishay Siliconix	Harris Corporation	Vishay Siliconix
Rds On (Max) @ Id, Vgs	200mOhm @ 8.4A, 10V	300mOhm @ 7.2A, 10V	-	300mOhm @ 7.2A, 10V
Vgs (Max)	±20V	±20V	±320V	±20V
Vgs(th) (Max) @ Id	4V @ 250µA	4V @ 250µA	-	4V @ 250µA
Current - Continuous Drain (Id) @ 25°C	14A (Tc)	12A (Tc)	12A	12A (Tc)
FET Type	P-Channel	P-Channel	P-Channel	P-Channel
Base Product Number	IRF9530	IRF9530	-	IRF9530
FET Feature	-	-	-	-
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-220-3	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs	58 nC @ 10 V	38 nC @ 10 V	-	38 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On)	10V	10V	-	10V
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V	100 V	60 V	100 V
Operating Temperature	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)	-55°C ~ 150°C	-55°C ~ 175°C (TJ)
Series	HEXFET®	-	-	-
Power Dissipation (Max)	3.8W (Ta), 79W (Tc)	3.7W (Ta), 88W (Tc)	75W	3.7W (Ta), 88W (Tc)
Mounting Type	Surface Mount	Surface Mount	Through Hole	Surface Mount
Supplier Device Package	D2PAK	D²PAK (TO-263)	TO-220AB	D²PAK (TO-263)
Input Capacitance (Ciss) (Max) @ Vds	760 pF @ 25 V	860 pF @ 25 V	-	860 pF @ 25 V
Package	Tape & Reel (TR)	Tape & Reel (TR)	Bulk	Tape & Reel (TR)

IRF9530NSTRLPBF Datasheet PDF

Download IRF9530NSTRLPBF pdf datasheets and Infineon Technologies documentation for IRF9530NSTRLPBF - Infineon Technologies.

Other Related Documents: IR Part Numbering System.pdf
PCN Packaging: Mult Device Standard Label Chg 29/Sep/2017.pdf Barcode Label Update 24/Feb/2017.pdf
PCN Design/Specification: Mult Dev Label Chgs Aug/2020.pdf Material Chg 24/Nov/2015.pdf
PCN Assembly/Origin: Mult Dev Wafer Chgs 31/Mar/2021.pdf

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America	United States	5
America	Brazil	7
Europe	Germany	5
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Oceania	Australia	6
Oceania	New Zealand	5
Asia	India	4
Asia	Japan	4
Middle East	Israel	6

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1.00kg-2.00kg	USD$40.00 - USD$80.00
2.00kg-3.00kg	USD$50.00 - USD$100.00

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