Manufacturer Part Number
IRF9530NPBF
Manufacturer
Infineon Technologies
Introduction
The IRF9530NPBF is a P-channel power MOSFET transistor from Infineon Technologies. It is part of the HEXFET series and designed for power switching applications.
Product Features and Performance
100V Drain-to-Source Voltage
14A Continuous Drain Current at 25°C
200mOhm On-State Resistance at 8.4A, 10V
760pF Input Capacitance at 25V
79W Power Dissipation at 25°C
Product Advantages
Low on-state resistance for high efficiency
High current handling capability
Wide operating temperature range (-55°C to 175°C)
Suitable for high-frequency switching applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 100V
Gate-to-Source Voltage (Vgs): ±20V
On-State Resistance (Rds(on)): 200mOhm
Continuous Drain Current (Id): 14A
Input Capacitance (Ciss): 760pF
Power Dissipation (Pd): 79W
Quality and Safety Features
RoHS3 compliant
TO-220AB package with through-hole mounting
Compatibility
Suitable for a wide range of power electronic applications
Application Areas
Switching power supplies
Motor drives
Lighting ballasts
Inverters
Converters
Product Lifecycle
Currently in active production
No known plans for discontinuation
Replacement options available if needed
Key Reasons to Choose This Product
Excellent performance and efficiency due to low on-state resistance
High current handling capability for demanding applications
Wide operating temperature range for reliability
Proven HEXFET technology from a reputable manufacturer
IRF9530NCypress Semiconductor (Infineon Technologies)