IRF7303TRPBF - Infineon Technologies

Manufacturer Part Number

IRF7303TRPBF

Manufacturer

Infineon Technologies

Introduction

The IRF7303TRPBF is a dual N-channel MOSFET device in an 8-SOIC package. It is part of the HEXFET series and designed for a wide range of applications.

Product Features and Performance

Dual N-channel MOSFET configuration

30V drain-to-source voltage (Vdss)

50mΩ maximum on-resistance (Rds(on)) at 2.4A, 10V

9A continuous drain current (Id) at 25°C

520pF maximum input capacitance (Ciss) at 25V

1V maximum gate-to-source threshold voltage (Vgs(th)) at 250A

25nC maximum gate charge (Qg) at 10V

-55°C to 150°C operating temperature range

Product Advantages

Compact 8-SOIC surface mount package

Low on-resistance for efficient power conversion

Wide operating temperature range

Dual-channel configuration for space-saving design

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 30V

On-Resistance (Rds(on)): 50mΩ @ 2.4A, 10V

Continuous Drain Current (Id): 4.9A @ 25°C

Input Capacitance (Ciss): 520pF @ 25V

Gate-to-Source Threshold Voltage (Vgs(th)): 1V @ 250A

Gate Charge (Qg): 25nC @ 10V

Operating Temperature: -55°C to 150°C

Quality and Safety Features

RoHS3 compliant

Tape and reel packaging for automated assembly

Compatibility

The IRF7303TRPBF is a standard dual N-channel MOSFET that can be used in a variety of power management and control applications.

Application Areas

Power supplies

Motor drives

Switching circuits

Automotive electronics

Industrial automation

Product Lifecycle

The IRF7303TRPBF is an active product, and Infineon continues to manufacture and support it. Replacement or upgrade options may be available as technology evolves.

Key Reasons to Choose This Product

Compact, space-saving 8-SOIC package

Low on-resistance for efficient power conversion

Wide operating temperature range for versatile applications

Dual-channel configuration for simplified circuit design

RoHS3 compliance for use in environmentally-conscious products