IRF7301PBF - Infineon Technologies

Manufacturer Part Number

IRF7301PBF

Manufacturer

Infineon Technologies

Introduction

The IRF7301PBF is a dual N-channel HEXFET power MOSFET in an 8-SOIC package. It is designed for high-performance switching applications.

Product Features and Performance

2W power rating

20V drain-to-source voltage

50mΩ max on-resistance

2A continuous drain current

660pF max input capacitance

20nC max gate charge

Logic-level gate

Product Advantages

High efficiency and low power loss

Fast switching speed

Compact surface-mount package

Suitable for high-power, high-frequency applications

Key Technical Parameters

Drain-to-source voltage: 20V

On-resistance: 50mΩ max

Continuous drain current: 5.2A

Input capacitance: 660pF max

Gate charge: 20nC max

Operating temperature: -55°C to 150°C

Quality and Safety Features

RoHS3 compliant

Suitable for high-temperature applications

Compatibility

Suitable for use in a variety of power electronic circuits and systems

Application Areas

Switching power supplies

Motor drives

Telecommunications equipment

Industrial automation

Product Lifecycle

The IRF7301PBF is an active product, and there are no known plans for discontinuation.

Replacement or upgrade options may be available from the manufacturer.

Several Key Reasons to Choose This Product

High efficiency and low power loss for improved system performance

Fast switching speed for high-frequency applications

Compact surface-mount package for space-constrained designs

Suitable for high-temperature and high-power applications

RoHS3 compliance for environmentally-friendly usage