Manufacturer Part Number
IRF6617TR1
Manufacturer
Infineon Technologies
Introduction
Discrete Semiconductor Product
Transistor FET, MOSFET Single
Product Features and Performance
N-Channel MOSFET
RoHS non-compliant
DirectFET Isometric ST package
HEXFET series
Tape & Reel (TR) package
Operating temperature range: -40°C to 150°C
Drain-to-Source voltage (Vdss): 30V
Maximum gate-to-source voltage (Vgs): ±20V
Maximum on-resistance (Rds(on)): 8.1mΩ @ 15A, 10V
Continuous drain current (Id): 14A (Ta), 55A (Tc)
Input capacitance (Ciss): 1300pF @ 15V
Maximum power dissipation: 2.1W (Ta), 42W (Tc)
Threshold voltage (Vgs(th)): 2.35V @ 250A
Drive voltage (Rds(on) max, Rds(on) min): 4.5V, 10V
Maximum gate charge (Qg): 17nC @ 4.5V
Product Advantages
High-performance MOSFET for power conversion applications
Efficient heat dissipation with DirectFET package
Wide operating temperature range
Key Technical Parameters
MOSFET technology
N-Channel
Surface mount
Quality and Safety Features
RoHS non-compliant
Compatibility
Suitable for power conversion applications
Application Areas
Power conversion
Motor control
Automotive electronics
Product Lifecycle
Current product, no indication of discontinuation
Several Key Reasons to Choose This Product
High-performance MOSFET with low on-resistance
Efficient heat dissipation with DirectFET package
Wide operating temperature range
Suitable for a variety of power conversion applications
