Manufacturer Part Number
IRF6614TRPBF
Manufacturer
Infineon Technologies
Introduction
The IRF6614TRPBF is a high-performance N-channel MOSFET transistor designed for a wide range of power management and switching applications.
Product Features and Performance
High current capability up to 55A continuous drain current
Low on-state resistance of 8.3mΩ
Wide operating temperature range of -40°C to 150°C
Fast switching performance with low gate charge of 29nC
Robust design with high drain-source voltage rating of 40V
Product Advantages
Excellent power efficiency and low power losses
Efficient heat dissipation due to the DirectFET packaging
Reliable and durable performance in demanding applications
Versatile usage in a wide range of power electronic designs
Key Technical Parameters
Drain-Source Voltage (Vdss): 40V
Gate-Source Voltage (Vgs): ±20V
Drain Current (Id): 12.7A (Ta), 55A (Tc)
On-State Resistance (Rds(on)): 8.3mΩ @ 12.7A, 10V
Input Capacitance (Ciss): 2560pF @ 20V
Power Dissipation: 2.1W (Ta), 42W (Tc)
Quality and Safety Features
Robust and reliable design for long-lasting performance
Compliance with relevant safety and environmental standards
Rigorous quality control and testing during manufacturing
Compatibility
Suitable for a wide range of power conversion and switching applications
Interchangeable with similar N-channel MOSFET devices
Application Areas
Power supplies
Motor drives
Inverters and converters
Industrial and consumer electronics
Product Lifecycle
Currently in production
No immediate plans for discontinuation
Replacement or upgrade options available from the manufacturer
Key Reasons to Choose This Product
High current handling capability and low on-state resistance for improved power efficiency
Reliable and durable performance in a wide temperature range
Efficient heat dissipation and compact DirectFET packaging
Versatile usage in various power electronic applications
Backed by Infineon's reputation for quality and technical support
