IRF60R217 - Infineon Technologies

Manufacturer Part Number

IRF60R217

Manufacturer

Infineon Technologies

Introduction

The IRF60R217 is a high-performance N-channel power MOSFET from Infineon Technologies. It is part of the StrongIRFET series and designed for a variety of power electronics applications.

Product Features and Performance

Drain to Source Voltage (Vdss) of 60V

Maximum Vgs of ±20V

Very low on-state resistance (Rds(on)) of 9.9mΩ @ 35A, 10V

Continuous Drain Current (Id) of 58A at 25°C (Tc)

High power dissipation capability of 83W (Tc)

Wide operating temperature range of -55°C to 175°C (TJ)

Fast switching performance with low input capacitance (Ciss) of 2170pF @ 25V

Product Advantages

Excellent energy efficiency due to low Rds(on)

High power density and thermal performance

Robust design for reliable operation

Supports wide range of gate drive voltages

Key Technical Parameters

MOSFET Technology

N-Channel FET Type

Vgs(th) of 3.7V @ 50A

Gate drive voltage range of 6V to 10V

Gate Charge (Qg) of 66nC @ 10V

Quality and Safety Features

RoHS3 compliant

D-PAK (TO-252AA) package for surface mount assembly

Compatibility

Suitable for a variety of power electronics applications, such as motor drives, switching power supplies, and power inverters.

Application Areas

Industrial

Automotive

Consumer Electronics

Renewable Energy Systems

Product Lifecycle

The IRF60R217 is an active and widely used product in Infineon's portfolio.

Replacements or upgrades with similar performance characteristics may be available in the future.

Key Reasons to Choose This Product

Excellent energy efficiency and power density

Reliable and robust design for demanding applications

Wide operating temperature range and gate drive voltage support

RoHS3 compliance for environmental responsibility

Proven performance in a variety of power electronics applications