Manufacturer Part Number
IRF60R217
Manufacturer
Infineon Technologies
Introduction
The IRF60R217 is a high-performance N-channel power MOSFET from Infineon Technologies. It is part of the StrongIRFET series and designed for a variety of power electronics applications.
Product Features and Performance
Drain to Source Voltage (Vdss) of 60V
Maximum Vgs of ±20V
Very low on-state resistance (Rds(on)) of 9.9mΩ @ 35A, 10V
Continuous Drain Current (Id) of 58A at 25°C (Tc)
High power dissipation capability of 83W (Tc)
Wide operating temperature range of -55°C to 175°C (TJ)
Fast switching performance with low input capacitance (Ciss) of 2170pF @ 25V
Product Advantages
Excellent energy efficiency due to low Rds(on)
High power density and thermal performance
Robust design for reliable operation
Supports wide range of gate drive voltages
Key Technical Parameters
MOSFET Technology
N-Channel FET Type
Vgs(th) of 3.7V @ 50A
Gate drive voltage range of 6V to 10V
Gate Charge (Qg) of 66nC @ 10V
Quality and Safety Features
RoHS3 compliant
D-PAK (TO-252AA) package for surface mount assembly
Compatibility
Suitable for a variety of power electronics applications, such as motor drives, switching power supplies, and power inverters.
Application Areas
Industrial
Automotive
Consumer Electronics
Renewable Energy Systems
Product Lifecycle
The IRF60R217 is an active and widely used product in Infineon's portfolio.
Replacements or upgrades with similar performance characteristics may be available in the future.
Key Reasons to Choose This Product
Excellent energy efficiency and power density
Reliable and robust design for demanding applications
Wide operating temperature range and gate drive voltage support
RoHS3 compliance for environmental responsibility
Proven performance in a variety of power electronics applications
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