Manufacturer Part Number
IRF60DM206
Manufacturer
Infineon Technologies
Introduction
The IRF60DM206 is a high-performance N-channel MOSFET transistor from Infineon Technologies. It is part of the StrongIRFET series and features a DirectFET Isometric ME package.
Product Features and Performance
60V drain-to-source voltage
130A continuous drain current at 25°C
Low on-resistance of 2.9mΩ
Wide operating temperature range of -55°C to 150°C
High input capacitance of 6530pF
Maximum power dissipation of 96W
Product Advantages
Excellent thermal and electrical performance
Compact and efficient DirectFET Isometric ME package
Suitable for high-current, high-power applications
Key Technical Parameters
N-Channel MOSFET
MOSFET (Metal Oxide) technology
Vds: 60V, Vgs (Max): ±20V
Rds(on) (Max): 2.9mΩ @ 80A, 10V
Ciss (Max): 6530pF @ 25V
Qg (Max): 200nC @ 10V
Quality and Safety Features
RoHS3 compliant
Suitable for harsh environments with -55°C to 150°C operating temperature range
Compatibility
Surface mount package
Tape and reel packaging
Application Areas
High-power switching applications
Motor drives
Power supplies
Industrial and automotive electronics
Product Lifecycle
Currently available
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent electrical and thermal performance
Compact and efficient DirectFET Isometric ME package
Wide operating temperature range
Suitable for high-current, high-power applications
RoHS3 compliant for use in various industries
IRF60B217Infineon