Manufacturer Part Number
IRF3415S
Manufacturer
Infineon Technologies
Introduction
Discrete semiconductor product
N-channel MOSFET transistor
Product Features and Performance
High power handling capability
Low on-resistance
Fast switching speed
Wide operating temperature range (-55°C to 175°C)
Product Advantages
Efficient power conversion
Reliable performance
Versatile applications
Key Technical Parameters
Drain-to-source voltage (Vdss): 150 V
Maximum gate-to-source voltage (Vgs): ±20 V
On-resistance (Rds(on)): 42 mΩ @ 22 A, 10 V
Continuous drain current (Id): 43 A @ 25°C
Input capacitance (Ciss): 2400 pF @ 25 V
Power dissipation: 3.8 W (Ta), 200 W (Tc)
Quality and Safety Features
MOSFET technology
Surface mount package (D2PAK)
RoHS non-compliant
Compatibility
Suitable for a variety of power electronics applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
Current product, no information on discontinuation or replacements
Key Reasons to Choose This Product
High power handling and efficiency
Low on-resistance for improved performance
Fast switching speed for efficient power conversion
Wide operating temperature range for versatile applications