Manufacturer Part Number
IRF3415PBF
Manufacturer
Infineon Technologies
Introduction
The IRF3415PBF is a high-performance N-channel MOSFET transistor from Infineon Technologies.
Product Features and Performance
N-channel MOSFET transistor
Drain-to-source voltage (Vdss) of 150V
Maximum gate-to-source voltage (Vgs) of ±20V
Low on-resistance (Rds(on)) of 42mΩ @ 22A, 10V
Continuous drain current (Id) of 43A @ 25°C
Input capacitance (Ciss) of 2400pF @ 25V
Maximum power dissipation of 200W @ Tc
Operating temperature range of -55°C to 175°C
Product Advantages
Excellent power handling and efficiency
Low on-resistance for low power loss
Robust and reliable performance
Suitable for a wide range of power applications
Key Technical Parameters
Drain-to-source voltage (Vdss): 150V
Gate-to-source voltage (Vgs): ±20V
On-resistance (Rds(on)): 42mΩ @ 22A, 10V
Continuous drain current (Id): 43A @ 25°C
Input capacitance (Ciss): 2400pF @ 25V
Power dissipation (Pd): 200W @ Tc
Operating temperature range: -55°C to 175°C
Quality and Safety Features
RoHS3 compliant
Suitable for a wide range of power applications
Compatibility
Suitable for use in a variety of power electronic circuits and devices
Application Areas
Power supplies
Motor drives
Inverters
Switching power converters
Amplifiers
Industrial and consumer electronics
Product Lifecycle
This product is currently available and not nearing discontinuation
Replacement or upgrade options may be available from Infineon Technologies
Key Reasons to Choose This Product
Excellent power handling and efficiency
Low on-resistance for low power loss
Robust and reliable performance
Wide operating temperature range
Suitable for a variety of power applications
RoHS3 compliant for environmental compliance
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