Manufacturer Part Number
IR2109
Manufacturer
Infineon Technologies
Introduction
The IR2109 is a high-speed, high-voltage MOSFET/IGBT driver that is designed to provide efficient and reliable switching for power conversion applications. It features a high-side driver and a low-side driver, enabling it to control both the high-side and low-side switches in a half-bridge configuration.
Product Features and Performance
Supports IGBT and N-Channel MOSFET gate driving
Dual-channel, half-bridge driver
Peak output current of 200mA (source) and 350mA (sink)
Wide supply voltage range of 10V to 20V
Logic input voltage range of 0.8V to 2.9V
High-side voltage up to 600V
Fast rise and fall times of 150ns and 50ns, respectively
Wide operating temperature range of -40°C to 150°C
Product Advantages
Efficient and reliable gate driving for power conversion applications
Supports both IGBT and MOSFET technologies
High-speed switching for improved system performance
Wide voltage and temperature operating ranges for flexibility
Key Reasons to Choose This Product
Optimized for high-efficiency power conversion
Proven reliability and performance in various applications
Simplifies circuit design with integrated high-side and low-side drivers
Wide range of compatibility and flexibility
Quality and Safety Features
Robust design and manufacturing processes ensure high reliability
Meets safety standards for power electronics applications
Compatibility
Suitable for a variety of power conversion applications, including motor drives, power supplies, and inverters
Application Areas
Suitable for a wide range of power conversion applications, including motor drives, power supplies, and inverters
Product Lifecycle
The IR2109 is an obsolete product, meaning it is no longer in active production. However, there are several equivalent and alternative models available from Infineon Technologies that may be suitable replacements. Customers are advised to contact our website's sales team for more information on available options and product lifecycle details.