Manufacturer Part Number
IR2108STRPBF
Manufacturer
Infineon Technologies
Introduction
High-performance power management gate driver for half-bridge configurations
Product Features and Performance
Independent channels
2 gate drivers for IGBT and N-Channel MOSFET devices
Bootstrap operation up to 600V
Non-Inverting input type
Fast rise and fall times of 150ns / 50ns, respectively
Robust surface mount SOIC-8 package
Product Advantages
Integrated under-voltage lock-out protection
High current drive capability with 200mA source and 350mA sink
Wide supply voltage range from 10V to 20V
High operating temperature range from -40°C to 150°C
Designed to minimize dead-time
Key Technical Parameters
Driven Configuration: Half-Bridge
Voltage - Supply: 10V ~ 20V
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output: 200mA source, 350mA sink
High Side Voltage - Max (Bootstrap): 600V
Mounting Type: Surface Mount
Package / Case: 8-SOIC
Quality and Safety Features
Under-voltage lock-out for both channels
Over-temperature protection
Industry-standard SOIC-8 package for reliable soldering
Compatibility
Suited for driving IGBT and N-Channel MOSFET in half-bridge configurations
Compatible with a wide range of supply and logic voltages
Easily integrated into existing power management systems
Application Areas
Motor control and drives
Switch Mode Power Supplies (SMPS)
Uninterruptible Power Supplies (UPS)
DC-DC converters
Solar inverters
Electric vehicle (EV) charging stations
Product Lifecycle
Active product status, not near discontinuation
Availability of replacements or upgrades ensured by Infineon Technologies
Several Key Reasons to Choose This Product
Optimized for low conduction and switching losses
Capability to handle high peak currents for efficient operation
Built-in safety features increase system reliability
High thermal performance for operation in high-temperature environments
Easy to use in a broad range of power management applications
Infineon's strong reputation for producing durable and reliable PMICs
IR21084STR.IR