Manufacturer Part Number
IR2011STRPBF
Manufacturer
Infineon Technologies
Introduction
High and Low-Side Driver for N-Channel MOSFETs
Product Features and Performance
Two Independently Controlled Channels
High-Side or Low-Side Driving Capability
N-Channel MOSFET Gate Driving
Input Turn-Off Threshold at 0.7V (VIL)
Input Turn-On Threshold at 2.2V (VIH)
Up to 1A Peak Source and Sink Current
Typical Rise Time of 35ns
Typical Fall Time of 20ns
Supports Bootstrap Operation with High Side Voltage up to 200V
Wide Supply Voltage Range from 10V to 20V
Product Advantages
Suitable for High-Speed Switching Applications
Dual Channel Flexibility for Various Circuit Designs
High Drive Current to Quickly Charge and Discharge Gate Capacitance
Robust Temperature Range for High-Reliability Applications
Tape & Reel Packaging for Automated Manufacturing
Key Technical Parameters
Driven Configuration: High-Side or Low-Side
Channel Type: Independent
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply Range: 10V to 20V
Current - Peak Output: 1A Source, 1A Sink
High Side Voltage - Max (Bootstrap): 200V
Rise/Fall Time: 35ns/20ns
Operating Temperature Range: -40°C to 150°C
Quality and Safety Features
Extended Temperature Range for Harsh Environments
Designed for Reliability in Power Applications
Compatibility
Compatible with N-Channel MOSFETs
Surface Mount 8-SOIC Footprint
Application Areas
Motor Control Circuits
Switch Mode Power Supplies (SMPS)
Power Inverters/Converters
Industrial Automation Systems
Product Lifecycle
Status: Active
No Indication of Nearing Discontinuation
Potential Availability of Replacements or Upgrades
Several Key Reasons to Choose This Product
High Drive Current Enables Efficient Switching
Dual Functionality Supports Versatile Circuit Designs
Fast Switching Characteristics for High-Frequency Applications
Wide Operating Voltage and Temperature Range Increase System Robustness
Infineon Technologies' Reputation for Quality and Reliability
Bulk Packaging in Tape & Reel for Ease of Manufacturing Integration
High Voltage Bootstrapped Operation Supported for High-Side Driving